The Properties of Shuffle Screw Dislocation in Semiconductors Silicon and Germanium
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چکیده
The width, Peierls barrier and stress for shuffle screw dislocation in Si and Ge have been calculated by the improved P-N theory. The calculated widths are about 0.6b, b is the Burgers vector. The Peierls barriers for shuffle screw dislocations in Si and Ge are respectively about 3.61~4.61meV/Å and 5.31~13.32meV/Å, Peierls stresses are 1.40~2.07 meV/Å and 1.93~3.29 meV/Å. Our calculated results may correspond to the metastable core of the shuffle screw dislocation which is centred on the bond between two atoms.
منابع مشابه
The Properties of Shuffle Screw Dislocations in Semiconductors Silicon and Germanium
The dislocation widths, Peierls barriers and Peierls stresses for shuffle screw dislocations in diamond structure crystals, Si and Ge, have been calculated by the improved P-N theory. The widths are about 0.6b, where b is the Burgers vector. The Peierls barrier for shuffle screw dislocation in Si and Ge, is about 3.61~4.61meV/Å and 5.31~13.32meV/Å, respectively. The Peierls stress is about 0.28...
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تاریخ انتشار 2015